Beschreibung
To adress the first issue, the work at hand comprises a Raman study of a Series of samples of singlelayer graphene patterned with square antidot lattices. We have found this nanopatterned graphene to be p-type doped with the doping concentration tentatively depending on the number of antidots per square unit. An attempt at creating pure zigzag edges has been made via an anisotropic etching process applied to square antidot lattices on singlelayer graphene. This thesis shows a step-b-step Raman evaluation of the etching process and verifies via inter-valley scattering that it indeed results in predominantly zigzag edges.
